Development of via-last 3D integration technologies using a new temporary adhesive system

Author

Fukushima, Tetsuya ; Bea, Jichel ; Murugesan, Mariappan ; Lee, Ki-Won ; Koyanagi, Mitsumasa

Author_Institution

New Ind. Creation Hatchery Center, Tohoku Univ., Sendai, Japan

fYear

2013

fDate

2-4 Oct. 2013

Firstpage

1

Lastpage

4

Abstract

We develop new via-last backside-via 3D integration technologies using a unique temporary adhesive system in which visible-light laser is employed for wafer debonding from glass carriers. The advanced 3D and TSV researches are driven in order to fabricate Si interposers with high-density TSVs and highly integrated 3D hetero chips at Global INTegration Initiative (GINTI) as a new system integration research center. High-TTV wafer thinning, notch-free backside via formation, and void-less bottom-up Cu electroplating are performed, and the resulting TSV daisy chains show good I-V characteristics.

Keywords

copper; electroplating; integrated circuit manufacture; three-dimensional integrated circuits; 3D hetero chips; Cu; Global INTegration Initiative; TSV researches; glass carriers; high-TTV wafer thinning; notch-free backside via formation; temporary adhesive system; via-last 3D integration technologies; visible-light laser; void-less bottom-up electroplating; wafer debonding; Bonding; Electron devices; Glass; Large scale integration; Silicon; Three-dimensional displays; Through-silicon vias; 3D integration; Deep RIE; TSV; Temporary bonding; Wafer thinning;

fLanguage

English

Publisher

ieee

Conference_Titel

3D Systems Integration Conference (3DIC), 2013 IEEE International

Conference_Location

San Francisco, CA

Type

conf

DOI

10.1109/3DIC.2013.6702383

Filename

6702383