• DocumentCode
    668018
  • Title

    Highly conformal and adhesive electroless barrier and Cu seed formation using nanoparticle catalyst for realizing a high aspect ratio cu-filled TSV

  • Author

    Nishizawa, Shinichi ; Arima, R. ; Shimizu, Tsuyoshi ; Shingubara, S. ; Inoue, Fumihiro

  • Author_Institution
    Dept. of Mech. Eng., Kansai Univ., Suita, Japan
  • fYear
    2013
  • fDate
    2-4 Oct. 2013
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    A conformal diffusion barrier was formed in a high aspect ratio through-silicon via (TSV) using electroless plating. Dense adsorption of Pd nanoparticle catalyst on SiO2 assisted the formation of a thin electroless CoWB layer, on which an electroless Cu seed layer could be deposited. The adhesion strength of the CoWB layer was improved with addition of adequate amount of saccharine and conformal deposition property was obtained with addition of SPS.
  • Keywords
    adhesives; cobalt compounds; conformal coatings; copper; diffusion barriers; electroless deposition; electroplating; integrated circuit interconnections; integrated circuit manufacture; nanoparticles; palladium; silicon compounds; three-dimensional integrated circuits; CoWB; Cu; Cu seed formation; Cu-filled TSV; Pd; SiO2; adhesion strength; adhesive electroless barrier; conformal deposition property; conformal diffusion barrier; dense adsorption; electroless plating; high aspect ratio; nanoparticle catalyst; saccharine; through silicon via; Adhesives; Adsorption; Educational institutions; Filling; Films; Metals; Through-silicon vias; Pd; TSV; barrier metal; eleectroless plating; filling process; nanoparticle;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    3D Systems Integration Conference (3DIC), 2013 IEEE International
  • Conference_Location
    San Francisco, CA
  • Type

    conf

  • DOI
    10.1109/3DIC.2013.6702392
  • Filename
    6702392