DocumentCode
670756
Title
1.3 µm InAs/GaAs quantum dot lasers on Si rib structures with current injection across direct-bonded GaAs/Si heterointerfaces
Author
Tanabe, Kazuki ; Watanabe, K. ; Arakawa, Yasuhiko
Author_Institution
Inst. for Nano Quantum Inf. Electron., Univ. of Tokyo, Tokyo, Japan
fYear
2012
fDate
16-20 Sept. 2012
Firstpage
1
Lastpage
3
Abstract
A 1.3 μm room-temperature InAs/GaAs quantum dot laser on a Si rib structure is demonstrated. The laser structure grown on a GaAs substrate is layer-transferred onto a patterned Si substrate by GaAs/Si direct wafer bonding without oxide or metal mediation, realizing current injection through the Si rib.
Keywords
III-V semiconductors; elemental semiconductors; gallium arsenide; indium compounds; integrated optics; laser transitions; quantum dot lasers; silicon; wafer bonding; GaAs; GaAs-Si; InAs-GaAs; current injection; direct wafer bonding; laser structure; quantum dot lasers; rib structures; temperature 293 K to 298 K; wavelength 1.3 mum; Gallium arsenide; Quantum dot lasers; Silicon; Substrates; Waveguide lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Optical Communications (ECOC), 2012 38th European Conference and Exhibition on
Conference_Location
Amsterdam
Type
conf
Filename
6705993
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