Title :
1.3 µm InAs/GaAs quantum dot lasers on Si rib structures with current injection across direct-bonded GaAs/Si heterointerfaces
Author :
Tanabe, Kazuki ; Watanabe, K. ; Arakawa, Yasuhiko
Author_Institution :
Inst. for Nano Quantum Inf. Electron., Univ. of Tokyo, Tokyo, Japan
Abstract :
A 1.3 μm room-temperature InAs/GaAs quantum dot laser on a Si rib structure is demonstrated. The laser structure grown on a GaAs substrate is layer-transferred onto a patterned Si substrate by GaAs/Si direct wafer bonding without oxide or metal mediation, realizing current injection through the Si rib.
Keywords :
III-V semiconductors; elemental semiconductors; gallium arsenide; indium compounds; integrated optics; laser transitions; quantum dot lasers; silicon; wafer bonding; GaAs; GaAs-Si; InAs-GaAs; current injection; direct wafer bonding; laser structure; quantum dot lasers; rib structures; temperature 293 K to 298 K; wavelength 1.3 mum; Gallium arsenide; Quantum dot lasers; Silicon; Substrates; Waveguide lasers;
Conference_Titel :
Optical Communications (ECOC), 2012 38th European Conference and Exhibition on
Conference_Location :
Amsterdam
