• DocumentCode
    6710
  • Title

    Parallel Conductive-AFM Lithography on LaAlO _{3} /SrTiO _{3} Interfaces

  • Author

    Shuo Li ; Mengchen Huang ; Feng Bi ; Rubin-Falcone, Harry ; Sangwoo Ryu ; Chang-Beom Eom ; Irvin, Patrick ; Levy, Jacob

  • Author_Institution
    Dept. of Phys. & Astron., Univ. of Pittsburgh, Pittsburgh, PA, USA
  • Volume
    12
  • Issue
    4
  • fYear
    2013
  • fDate
    Jul-13
  • Firstpage
    518
  • Lastpage
    520
  • Abstract
    Nanoscale devices can be created at the LaAlO3/SrTiO3 interface by metastable charging of the top LaAlO3 surface with a voltage-biased conductive-atomic force microscope (c-AFM) tip. In order to create scalable nanoelectronic circuits, it will be important to develop procedures that allow multiple tips to “write” nanostructures in parallel. Here, we demonstrate parallel writing of conductive nanostructures at the LaAlO3/SrTiO3 interface using an array of c-AFM tips. Independent control over the writing process for each tip is achieved by holding the tip array at a fixed potential and varying the voltage applied to individual electrodes. The approach developed here should be applicable to 2-D tip arrays with millions of probes.
  • Keywords
    atomic force microscopy; electrical conductivity; lanthanum compounds; nanoelectronics; nanofabrication; nanostructured materials; sputter deposition; strontium compounds; LaAlO3-SrTiO3; conductive nanostructures; nanoscale devices; parallel conductive-AFM lithography; scalable nanoelectronic circuits; voltage-biased conductive-atomic force microscopy; writing process; LaAlO$_{3}$/SrTiO $_{3}$; lithography; nanowire;
  • fLanguage
    English
  • Journal_Title
    Nanotechnology, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1536-125X
  • Type

    jour

  • DOI
    10.1109/TNANO.2013.2256465
  • Filename
    6493446