Title :
Calibration of the density-gradient TCAD model for germanium FinFETs
Author :
Mehta, Harsham ; Lodha, Saurabh ; Ganguly, Utsav ; Ganguly, Shaumik
Author_Institution :
Dept. of Electr. Eng., Indian Inst. of Technol. Bombay, Mumbai, India
Abstract :
We demonstrate that the density-gradient TCAD model can reproduce the results of multi-band Schrodinger-Poisson simulations for quantum confinement in scaled germanium FinFETs with a single fitting parameter that varies by surface orientation, but is independent of doping level and fin thickness.
Keywords :
MOSFET; Poisson equation; Schrodinger equation; calibration; elemental semiconductors; germanium; semiconductor device models; technology CAD (electronics); Ge; calibration; density-gradient TCAD model; doping level; fin thickness; germanium FinFETs; multiband Schrodinger-Poisson simulations; quantum confinement; surface orientation; Doping; FinFETs; Germanium; Logic gates; Mathematical model; Semiconductor process modeling; Silicon;
Conference_Titel :
Micro and Nanoelectronics (RSM), 2013 IEEE Regional Symposium on
Conference_Location :
Langkawi
Print_ISBN :
978-1-4799-1181-3
DOI :
10.1109/RSM.2013.6706493
