DocumentCode :
671169
Title :
Influence of metal catalyst for zinc oxide nanostructures grown by TCVD method for extended-gate FET sensor application
Author :
Rosli, Aimi Bazilah ; Patah, N. D. H. Abd ; Rosdan, M.A. ; Marbie, M.M. ; Juhari, M.H. ; Shariffudin, S.S. ; Herman, Sukreen Hana ; Rusop, M.
Author_Institution :
NANO-Electron. Centre, Univ. Teknol. MARA, Shah Alam, Malaysia
fYear :
2013
fDate :
25-27 Sept. 2013
Firstpage :
171
Lastpage :
174
Abstract :
In this work, zinc oxide (ZnO) nanostructure was synthesized by thermal vapor deposition (TCVD) on various kinds of metal catalyst namely, gold (Au) and platinum (Pt). The thicknesses of the metal catalyst were varied (10 nm and 15 nm) to investigate the shape of the ZnO nanostructures. The metal catalyst was used as seed layer to facilitate the nucleation site for nanostructured growth. FESEM images showed that different shape of ZnO nanostructures were produced on the different type of metal catalyst with different thicknesses. We found that those on Pt catalyst were in the form of nanotetrapod and those on Au catalyst were nanorods. The ZnO nanostructure on Au was tested for its sensitivity in pH measurement for application in extended-gate field effect transistor sensor and a sensitivity of 38.2 mV/pH was achieved.
Keywords :
II-VI semiconductors; catalysts; chemical vapour deposition; field effect transistors; field emission electron microscopy; gold; nanofabrication; nanorods; nanostructured materials; nucleation; platinum; scanning electron microscopy; semiconductor growth; wide band gap semiconductors; zinc compounds; Au; FESEM images; Pt; TCVD method; ZnO; extended-gate FET sensor application; metal catalyst; nanorods; nanotetrapod; nucleation site; pH measurement; size 10 nm to 15 nm; thermal vapor deposition; zinc oxide nanostructures; Gold; Indium tin oxide; Logic gates; Nanostructures; Sensitivity; Zinc oxide; EGFET; ZnO nanostructure; metal catalyst; morphology; thermal CVD;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Micro and Nanoelectronics (RSM), 2013 IEEE Regional Symposium on
Conference_Location :
Langkawi
Print_ISBN :
978-1-4799-1181-3
Type :
conf
DOI :
10.1109/RSM.2013.6706500
Filename :
6706500
Link To Document :
بازگشت