• DocumentCode
    671216
  • Title

    High frequency small signal modeling of CNTFET

  • Author

    Farhana, Soheli ; Alam, A. H. M. Zahirul ; Khan, Sharifullah

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Int. Islamic Univ. Malaysia, Kuala Lumpur, Malaysia
  • fYear
    2013
  • fDate
    25-27 Sept. 2013
  • Firstpage
    348
  • Lastpage
    351
  • Abstract
    In this paper, we describe the development of small signal model of a CNTFET. The development consist of high frequency response of CNTFET. The CNTFET generates higher output rather than the conventional Si MOSFET. An SPICE model for enhancement mode Carbon nanotube transistor has been developed. The performance analysis of the CNTFET shows the desirable performance parameter in terms of 10 Thz frequency with 1.8 mS.
  • Keywords
    SPICE; carbon nanotube field effect transistors; elemental semiconductors; semiconductor device models; C; CNTFET; SPICE model; enhancement mode carbon nanotube transistor; frequency 10 THz; high frequency response; high frequency small signal modeling; Erbium; CNT; FET; band-gap;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Micro and Nanoelectronics (RSM), 2013 IEEE Regional Symposium on
  • Conference_Location
    Langkawi
  • Print_ISBN
    978-1-4799-1181-3
  • Type

    conf

  • DOI
    10.1109/RSM.2013.6706547
  • Filename
    6706547