Title :
1480nm InGaAsP LOC broad-area laser diodes
Author :
Fendler, D. ; Moehrle, Martin ; Spiegelberg, M. ; Rehbein, W. ; Grote, N.
Author_Institution :
Heinrich-Hertz-Inst., Fraunhofer Inst. for Telecommun., Berlin, Germany
Abstract :
1480nm InGaAsP large optical cavity broad-area laser diodes have been developed and optimized for pulsed and CW operation. The optical output powers at 20°C are 18 W and 3.7 W, respectively. In accelerated ageing tests no noticeable degradation was observed.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; laser beams; laser cavity resonators; optical testing; semiconductor lasers; CW operation; InGaAsP; InGaAsP large optical cavity broad-area laser diodes; accelerated ageing tests; optical output powers; power 18 W; power 3.7 W; pulsed operation; temperature 20 degC; wavelength 1480 nm; Biomedical optical imaging; Diode lasers; Optical device fabrication; Optical fibers; Optical pumping; Power generation; Semiconductor lasers; High power; InGaAsP; NIR; semiconductor laser;
Conference_Titel :
High Power Diode Lasers and Systems Conference (HPD), 2013
Conference_Location :
Coventry
Print_ISBN :
978-1-4799-2747-0
DOI :
10.1109/HPD.2013.6706594
