Over 20 MHz modulation bandwidth on 250 nm emission of AlGaN micro-LEDs

Author

Akhter, M. ; Pampili, P. ; Zubialevich, V.Z. ; Eason, C. ; Quan, Z.H. ; Maaskant, P.P. ; Parbrook, P.J. ; Corbett, B.

Author_Institution

Tyndall Nat. Inst., Univ. Coll. Cork, Cork, Ireland

Volume

51

Issue

4

fYear

2015

fDate

2 19 2015

Firstpage

354

Lastpage

355

Abstract

Bandwidth measurements of deep ultra-violet micro-light-emitting diode (LED) electroluminescence centred at 250 nm using a multiple quantum well aluminium gallium nitride (AlGaN)-based LED structure grown on a sapphire substrate is presented. By controlled etching of the wafer surface, parabolically shaped micro-LED structures were formed to enhance light emission through the substrate. Devices were tested on-wafer and bandwidth measurements were carried out on individual emission peaks from the devices. A bandwidth of more than 20 MHz was achieved on the 250 nm peak.

Keywords

III-V semiconductors; aluminium compounds; electroluminescence; etching; gallium compounds; light emitting diodes; semiconductor growth; semiconductor quantum wells; wide band gap semiconductors; AlGaN; DUV EL; LED structure; MQW; bandwidth measurements; deep ultraviolet microLED electroluminescence; light emission; modulation bandwidth; multiple quantum well aluminium gallium nitride; sapphire substrate; wafer surface etching; wavelength 250 nm;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el.2014.4253

Filename

7042414