DocumentCode
671334
Title
Wafer bonding type selection for 3D IC designs
Author
Shih-Hsu Huang ; Hua-Hsin Yeh ; Chun-Hua Cheng
Author_Institution
Dept. of Electron. Eng., Chung Yuan Christian Univ., Chungli, Taiwan
fYear
2013
fDate
22-25 Oct. 2013
Firstpage
198
Lastpage
201
Abstract
The minimization of TSV (through-silicon-via) count is one of the most important objectives in the 3D IC (three-dimensional integrated circuit) design. In this paper, we demonstrate that the selection of wafer bonding type for each pair of adjacent layers has a great impact on the TSV count. However, to the best of our knowledge, given a layer assignment result, the problem of selecting wafer bonding type for TSV count minimization has not been well studied. Based on that observation, we are motivated to use the network flow to formally model the problem and then use the shortest path approach to minimize the TSV count. Note that our shortest path approach guarantees solving this TSV count minimization problem optimally in polynomial time complexity. Compared with the previous high-level synthesis approach that only performs layer assignment to minimize the TSV count, benchmark data show that our approach can further reduce 48.38% TSV count through wafer bonding type selection.
Keywords
integrated circuit design; minimisation; three-dimensional integrated circuits; wafer bonding; 3D IC designs; TSV; minimization problem; polynomial time complexity; shortest path approach; through-silicon-via; wafer bonding type selection; Bonding; Metallization; Minimization; Three-dimensional displays; Through-silicon vias; Wafer bonding; Electronic Design Automation; High-Level Synthesis; Layer Assignment; Three-Dimensional Integrated Circuit; Through-Silicon-Via;
fLanguage
English
Publisher
ieee
Conference_Titel
Microsystems, Packaging, Assembly and Circuits Technology Conference (IMPACT), 2013 8th International
Conference_Location
Taipei
ISSN
2150-5934
Type
conf
DOI
10.1109/IMPACT.2013.6706670
Filename
6706670
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