Optimization of SiC Schottky diode using linear p-top for edge termination

Author

Mrinal, Aryadeep ; Vijay, Kumar M. P. ; Vivek, N. ; Manjunatha, M. ; Sheu, G. ; Shao-Ming Yang

Author_Institution

Dept. of Comput. Sci. & Inf. Eng., Asia Univ., Taichung, Taiwan

fYear

2013

fDate

6-9 Oct. 2013

Firstpage

24

Lastpage

27

Abstract

The trade-off between on-state and off-state characteristics of 4H-SiC Schottky diode has been optimized using linear p-top in the edge termination structure. The advantage of linear p-top has been illustrated by comparing results of 4H-SiC Schottky diode with planar structure using Silvaco Atlas Technology-computer-aided-design (TCAD) simulation tool. The breakdown-voltage characteristic of the SiC Schottky diode is significantly improved with the linear p-top edge termination. The planar SiC Schottky diode shows less than 300-V breakdown voltage, while the linear p-top structure shows breakdown voltage greater than 800-V with forward voltage <;1.5-V. The pronounced improvement in the breakdown-voltage characteristics is attributed to the reduction of electric field at the Schottky contact edge well by the linear p-top edge termination. The change in forward voltage and breakdown voltage with the variation in length of P-top mask in the termination region is observed.

Keywords

Schottky barriers; Schottky diodes; semiconductor device breakdown; silicon compounds; technology CAD (electronics); wide band gap semiconductors; 4H-SiC Schottky diode; Silvaco Atlas technology-computer-aided-design simulation tool; TCAD; breakdown-voltage characteristic; edge termination structure; forward voltage; linear p-top; off-state characteristics; on-state characteristics; planar structure; Anodes; Breakdown voltage; Cathodes; Electric breakdown; Silicon carbide; Substrates; Switches;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanotechnology Materials and Devices Conference (NMDC), 2013 IEEE 8th

Conference_Location

Tainan

Print_ISBN

978-1-4799-3386-0

Type

conf

DOI

10.1109/NMDC.2013.6707473

Filename

6707473