Further Insights in TFET Operation

Author

Villalon, A. ; Le Carval, Gilles ; Martinie, S. ; Le Royer, Cyrille ; Jaud, M.-A. ; Cristoloveanu, S.

Author_Institution

Univ. Grenoble Alpes, Grenoble, France

Volume

61

Issue

8

fYear

2014

fDate

Aug. 2014

Firstpage

2893

Lastpage

2898

Abstract

Based on the band diagram analysis and systematic measurements, comprehensive description of the output characteristics of tunnel FETs (TFETs) operation is proposed. We show that both tunneling junctions have to be considered simultaneously to explain TFET behavior correctly. For the first time, we present and investigate in detail untruncated I_D(V_D) measurements of TFETs. We prove that competition between the two tunneling junctions explains these experiments. Insights on the links between I_D(V_G) and I_D(V_D) curves are provided, which reveal the origin of the tunneling current in the device. Our theory also enables to clarify previously reported I_D(V_D) results.

Keywords

MOSFET; tunnelling; TFET operation; band diagram analysis; detail untruncated measurement; systematic measurement; tunnel FET; tunneling current origin; tunneling junction; Current measurement; Junctions; Logic gates; Shape; Silicon; Switches; Tunneling; Band diagram; CMOS; SOI; band to band tunneling (BtBT); tunneling FET; tunneling FET.;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2014.2325600

Filename

6842614