Simulation of RF Power Distribution in a Packaged GaN Power Transistor Using an Electro-Thermal Large-Signal Description

Author

Schnieder, Frank ; Bengtsson, Olof ; Schmuckle, F. ; Rudolph, Matthias ; Heinrich, Wolfgang

Author_Institution

Leibniz-Inst. fur Hochstfrequenztechnik, Ferdinand-Braun-Inst., Berlin, Germany

Volume

61

Issue

7

fYear

2013

fDate

Jul-13

Firstpage

2603

Lastpage

2609

Abstract

A comprehensive electro-thermal model of a packaged GaN high electron-mobility transistor (GaN-HEMT) is presented. It includes an RF large-signal description, as well as thermal coupling between the individual cells of a powerbar. Thus, it allows studying the inhomogeneous RF power distribution and other effects within the transistor. The model is verified and applied to a 50-W GaN-HEMT powerbar. The model proves to represent a versatile tool for transistor design. Important features of the new version compared to existing versions are its capability to predict internal electrical instabilities and to allow for optimization of the cell combining.

Keywords

III-V semiconductors; gallium compounds; power HEMT; semiconductor device models; semiconductor device packaging; wide band gap semiconductors; GaN; HEMT; cell combining optimization; electron-mobility transistor; electrothermal large-signal description; inhomogeneous RF power distribution; internal electrical instability prediction; power 50 W; power transistor packaging; powerbar cell; thermal coupling; Electro-thermal model; GaN high electron-mobility transistors (GaN-HEMTs); large-signal modeling; power transistors;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/TMTT.2013.2261089

Filename

6517328