Investigation of Sensor Performance in Accumulation- and Inversion-Mode Silicon Nanowire pH Sensors

Author

Jieun Lee ; Bongsik Choi ; Seonwook Hwang ; Jung Han Lee ; Byung-Gook Park ; Tae Jung Park ; Dong Myong Kim ; Dae Hwan Kim ; Sung-Jin Choi

Author_Institution

Sch. of Electr. Eng., Kookmin Univ., Seoul, South Korea

Volume

61

Issue

5

fYear

2014

fDate

May-14

Firstpage

1607

Lastpage

1610

Abstract

We investigate the performance of accumulation (ACC)-mode and inversion (INV)-mode silicon nanowire (SiNW) pH sensors that are electrically controlled by a liquid gate. The two sensing parameters of the changes of threshold voltage and current are explored in both types of SiNW pH sensors at different pH levels. As device dimensions and channel doping concentration increase, the performance of the ACC-mode biosensor degrades more rapidly than the performance of the INV-mode biosensor. Therefore, INV-mode SiNW pH sensors with a liquid gate could be robust to process variation and provide improved current sensitivity.

Keywords

biosensors; chemical sensors; doping profiles; elemental semiconductors; nanowires; semiconductor quantum wires; silicon; ACC-mode biosensor; INV-mode biosensor; Si; accumulation-mode silicon nanowire pH sensors; channel doping concentration; current sensitivity; device dimensions; inversion-mode silicon nanowire pH sensors; liquid gate; pH levels; process variation; sensing parameters; sensor performance; threshold voltage; Biosensors; Educational institutions; Electrical engineering; Performance evaluation; Sensitivity; Silicon; Transistors; Accumulation (ACC)-mode transistor; biosensors; inversion (INV)-mode transistor; ion-sensitive field-effect transistor (FET); silicon nanowire (SiNW) FET; silicon nanowire (SiNW) FET.;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2014.2312413

Filename

6784088