DocumentCode
675573
Title
Opportunities in 3D substrate bonding
Author
Matthias, T. ; Uhrmann, Thomas ; Dragoi, Viorel ; Lindner, Philipp
Author_Institution
EV Group, St. Florian am Inn, Austria
fYear
2013
fDate
7-10 Oct. 2013
Firstpage
1
Lastpage
2
Abstract
Vertical stacking of thin chips combined with Through-Silicon-Vias (TSVs) as interconnects is an attractive path to higher functional density of ICs. Different functional entities of a device are manufactured separately and later integrated by wafer bonding. This enables a modular device architecture and thus a modular manufacturing supply chain. Device manufacturers can focus on their core competence, e.g., designing and building the ASIC, and then add standardized modules, such as logic controllers or memory, from other manufacturers. Stacking dies enables the electrical performance of a system-on-chip, but it reduces the design time, complexity and cost significantly. Wafer bonding is a key manufacturing technology for 3D ICs. Fusion wafer bonding, which was initally developed for SOI wafer manufacturing is the most promising wafer stacking technology for 3D ICs.
Keywords
application specific integrated circuits; integrated circuit interconnections; system-on-chip; three-dimensional integrated circuits; wafer bonding; 3D substrate bonding; ASIC; IC; TSV; core competence; design time reduction; electrical performance; functional density; functional entities; logic controllers; memory; modular device architecture; modular manufacturing supply chain; stacking dies; standardized modules; system-on-chip; thin chips; through-silicon-vias; vertical stacking; wafer bonding; Annealing; Bonding; Plasma temperature; Stacking; Three-dimensional displays; Wafer bonding; 3D IC; More-than-Moore; direct bonding; fusion bonding; low-temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), 2013 IEEE
Conference_Location
Monterey, CA
Type
conf
DOI
10.1109/S3S.2013.6716528
Filename
6716528
Link To Document