Possibility of SOI based super steep subthreshold slope MOSFET for ultra low voltage application

Ultra Low Power (ULP) LSI´s require the steep subthreshold slope (SS) MOSFET. However, the theoretical SS limit of the conventional MOSFET is 60mV/dec at the room temperature. Recently, devices which have the less than 60mV/dec SS, such as the Tunnel FET (TFET) and the Impact Ionization MOS (I-MOS), have been studied. In addition to those, the steep SS MOSFET´s using the Floating-Body (FB) SOI have been proposed. In this work, we report our finding of the FB and the Body-Tied (BT) SOI MOSFET with the super steep SS (<; 1mV/Dec) characteristics with the 0.15um SOI. We also discuss the possibility of it as a switching device for the ultra low voltage application, where we consider that the three points are the issues to improve; reducing the operation voltage, increasing Ion/Ioff ratios which also pay attention keeping the low Ioff, controlling hysteresis characteristics.