• DocumentCode
    675591
  • Title

    Analysis of Vth flexibility in ultrathin-BOX SOI FinFETs

  • Author

    Endo, Kazuhiro ; Ishikawa, Yozo ; Liu, Yanbing ; Matsukawa, T. ; O´uchi, S. ; Tsukada, J. ; Migita, S. ; Mizubayashi, W. ; Morita, Yusuke ; Ota, Hiroyuki ; Yamauchi, Hiroyuki ; Masahara, M.

  • Author_Institution
    Adv. Ind. Sci. & Technol. (AIST), Tsukuba, Japan
  • fYear
    2013
  • fDate
    7-10 Oct. 2013
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We have successfully demonstrated a Vth controllable multigate FinFET on a 10-nm-thick ultrathin BOX (UTB) SOI substrate. It is revealed that the Vth of the FinFET on the UTB SOI substrate is effectively modulated thanks to the improved coupling between the Si channel and the back gate. We have also carried out analysis of the Vth controllability in terms of the size dependence such as the gate length (LG) and the fin width (TFin).
  • Keywords
    MOSFET; silicon-on-insulator; UTB SOI substrate; back gate; fin width; gate length; silicon channel; size 10 nm; size dependence; ultrathin-BOX SOI FinFET; voltage threshold controllable multigate FinFET; voltage threshold flexibility; Controllability; Fabrication; FinFETs; Logic gates; Modulation; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), 2013 IEEE
  • Conference_Location
    Monterey, CA
  • Type

    conf

  • DOI
    10.1109/S3S.2013.6716563
  • Filename
    6716563
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=675591