Improved Quantum Efficiency in Green InGaN Light-Emitting Diodes With InGaN Barriers

Author

Chang, Jih-Yuan ; Chang, Yi-An ; Chen, Fang-Ming ; Kuo, Yih-Ting ; Kuo, Yen-Kuang

Author_Institution

Dept. of Phys., Nat. Changhua Univ. of Educ., Changhua, Taiwan

Volume

25

Issue

1

fYear

2013

fDate

Jan.1, 2013

Firstpage

55

Lastpage

58

Abstract

The characteristics of green InGaN light-emitting diodes (LEDs) are investigated. The results obtained numerically show that the optical performance of green InGaN LEDs is deteriorated severely by Auger recombination, which becomes more severe at high current injection levels. Through employing In_0.2Ga_0.8N as barrier material, the radiative recombination efficiency is enhanced and the Auger recombination is suppressed efficiently because of the better electron-hole spatial overlap and the more uniform carrier distribution in the active region.

Keywords

Auger effect; III-V semiconductors; electron-hole recombination; gallium compounds; indium compounds; light emitting diodes; wide band gap semiconductors; Auger recombination; LED; barrier material; carrier distribution; electron-hole spatial overlap; green light-emitting diodes; quantum efficiency; radiative recombination efficiency; Current density; Gallium nitride; Green products; Light emitting diodes; Materials; Radiative recombination; InGaN; light-emitting diodes (LEDs); multiple quantum well;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2012.2227700

Filename

6353514