Title :
A 200 GHz Heterodyne Image Receiver With an Integrated VCO in a SiGe BiCMOS Technology
Author :
Daekeun Yoon ; Jae-Sung Rieh
Author_Institution :
Sch. of Electr. Eng., Korea Univ., Seoul, South Korea
Abstract :
A 200 GHz heterodyne image receiver consisting of a mixer integrated with an on-chip voltage controlled oscillator (VCO) has been developed in a 0.18 μm SiGe BiCMOS technology. Incoming signals near 200 GHz are down-converted by the 3rd-order subharmonic mixer with V-band local oscillator (LO) pumping, which is provided by the Colpitts VCO with a stacked common-base buffer. The measured minimum conversion loss is 11.5 dB at 196 GHz with an input 1 db compression point (P -1 dB) of -13 dBm. The fabricated chip with an area of 600 × 400 μm2 including pads consumes total DC power of 25.5 mW. A two-dimensional 200 GHz image acquired with the receiver is presented to demonstrate its imaging application.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; field effect MIMIC; millimetre wave imaging; millimetre wave integrated circuits; millimetre wave mixers; millimetre wave oscillators; millimetre wave receivers; voltage-controlled oscillators; 3rd-order subharmonic mixer; BiCMOS technology; Colpitts VCO; LO pumping; SiGe; V-band local oscillator pumping; frequency 196 GHz; frequency 200 GHz; gain 1 dB; heterodyne image receiver; image acquisition; integrated VCO; loss 11.5 dB; on-chip voltage controlled oscillator; power 25.5 W; size 0.18 mum; stacked common-base buffer; BiCMOS integrated circuits; Imaging; Mixers; Radio frequency; Receivers; Silicon germanium; Voltage-controlled oscillators; Bipolar integrated circuit; heterojunction bipolar transistors; imaging; receivers;
Journal_Title :
Microwave and Wireless Components Letters, IEEE
DOI :
10.1109/LMWC.2014.2324177