Investigation of baseband electrical memory effects on the dynamic characteristics of power transistors

Author

Chaudhary, Muhammad Akmal ; Memon, Zubair Ahmed ; Lees, J. ; Benedikt, J. ; Tasker, P.

Author_Institution

Dept. of Electr. Eng., Ajman Univ. of Sci. & Technol., Ajman, United Arab Emirates

fYear

2013

fDate

19-20 Dec. 2013

Firstpage

106

Lastpage

109

Abstract

The inter-modulation distortion products vary in amplitude and asymmetry due to the effects of baseband and 2^nd harmonic impedance. This paper presents an investigation into the relationship between the IMD asymmetries caused by baseband impedance variations and looping or hysteresis that can sometimes appear in the dynamic transfer characteristics of microwave power devices when subjected to modulated excitation. Here, the investigations are carried out on 2W GaN HFET bare die device characterized at 2.1GHz, and using IF active load-pull to quantify the role of baseband impedances on observed hysteresis in the dynamic transfer characteristics. Analysis is performed in envelope domain in order to more effectively reveal the DDT´s sensitivity to electrical baseband memory effects.

Keywords

III-V semiconductors; gallium compounds; high electron mobility transistors; intermodulation distortion; microwave power transistors; wide band gap semiconductors; GaN; GaN HFET; IF active load-pull; baseband electrical memory effects; baseband impedance variations; dynamic characteristics; dynamic transfer characteristics; frequency 2.1 GHz; harmonic impedance; inter-modulation distortion products; microwave power devices; power 2 W; power transistors; Baseband; Current measurement; Delays; Frequency measurement; Frequency modulation; Impedance; Radio frequency; Envelope domain; GaN; IF active load-pull; hysteresis; inter-modulation; memory Effects;

fLanguage

English

Publisher

ieee

Conference_Titel

Multi Topic Conference (INMIC), 2013 16th International

Conference_Location

Lahore

Type

conf

DOI

10.1109/INMIC.2013.6731333

Filename

6731333