• DocumentCode
    680388
  • Title

    Performance analysis of Si/SiGe double junction solar cell

  • Author

    Choudhary, Santosh K. ; Ranjan, Rajiv ; Das, Manab Kr

  • Author_Institution
    Dept. of Electron. Eng., Indian Sch. of Mines, Dhanbad, India
  • fYear
    2013
  • fDate
    13-15 Dec. 2013
  • Firstpage
    1
  • Lastpage
    5
  • Abstract
    In this paper, performance of Si/Si1-xGex thin film double junction solar cell is analyzed. Variation of efficiency of individual subcells and overall efficiency of the device has been studied with Ge-content and other device parameters viz., thickness of different subcells. Choice of Ge-content in SiGe layer and thickness of the top cell are very important to obtain optimized efficiency of the device. Efficiency increases initially with x and after a particular value of x, it decreases. More than 20% maximum efficiency is obtained for x=0.28, and for the thickness of top and bottom cells are 0.2μm and 0.12μm respectively.
  • Keywords
    Ge-Si alloys; elemental semiconductors; silicon; solar cells; thin film devices; Si-Si1-xGex; size 0.12 mum; size 0.2 mum; thin film double junction solar cell; Absorption; Current density; Junctions; Photovoltaic cells; Silicon; Silicon germanium; Si/SiGe; conversion efficiency; multijunction; solar cells;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave and Photonics (ICMAP), 2013 International Conference on
  • Conference_Location
    Dhanbad
  • Print_ISBN
    978-1-4799-2176-8
  • Type

    conf

  • DOI
    10.1109/ICMAP.2013.6733559
  • Filename
    6733559
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=680388