A 0.1dB NF, 2GHz low power CMOS low noise amplifier

Author

Pandey, S.K. ; Agrawal, Sanjay ; Singh, Jaskirat ; Parihar, Manoj Singh

Author_Institution

ECE Dept., PDPM-IIITDM, Jabalpur, India

fYear

2013

fDate

16-18 Dec. 2013

Firstpage

1

Lastpage

4

Abstract

Short range applications find significant usage in different areas such as industrial process automation and environmental monitoring. Power consumption and noise figure are important constraint for short range application as it carries limited and irreplaceable power sources. This paper describes a CMOS low noise amplifier (LNA) suitable for low voltage short range application. The reported LNA exhibits the best noise performance when compared with existing circuits. The proposed LNA operates at 2 GHz with noise figure (NF) of 0.1 dB, input and output reflection coefficients are S₁₁, S₂₂ <;-10 dB, power gain S₂₁=16 dB and power dissipation of approximately 8 mW from 0.8 V power supply. A standard 90 nm PTM CMOS process is used for simulation.

Keywords

CMOS analogue integrated circuits; UHF amplifiers; UHF integrated circuits; integrated circuit design; low noise amplifiers; low-power electronics; LNA; environmental monitoring; frequency 2 GHz; gain 16 dB; industrial process automation; low power CMOS low noise amplifier; low voltage short range application; noise figure 1 dB; power consumption; power dissipation; size 90 nm; standard PTM CMOS process; voltage 0.8 V; CMOS integrated circuits; CMOS technology; Gain; Impedance matching; Noise; Noise measurement; Power dissipation;

fLanguage

English

Publisher

ieee

Conference_Titel

Control, Automation, Robotics and Embedded Systems (CARE), 2013 International Conference on

Conference_Location

Jabalpur

Type

conf

DOI

10.1109/CARE.2013.6733704

Filename

6733704