Title :
Two parameter extraction solutions for high temperature SiC Schottky diodes — Converging to reality
Author :
Pristavu, G. ; Brezeanu, G. ; Draghici, F.
Author_Institution :
Univ. “Politeh.” of Bucharest, Bucharest, Romania
Abstract :
This paper presents two methods of parameter extraction for SiC Schottky diodes. These methods are implemented and tested for characteristics of real devices (SiC Schottky diodes). Extra attention is paid to how these two methods can converge to the same solution and how the extracted results can offer valuable information about potential device technology improvement.
Keywords :
Schottky diodes; semiconductor device models; silicon compounds; wide band gap semiconductors; SiC; device technology improvement; high temperature Schottky diode; two parameter extraction solutions; Parameter extraction; Schottky barriers; Schottky diodes; Silicon carbide; Temperature; Temperature measurement; Temperature sensors; Parameter extraction; Schottky barrier; SiC Schottky diode; contact area; ideality factor;
Conference_Titel :
Design and Technology in Electronic Packaging (SIITME), 2013 IEEE 19th International Symposium for
Conference_Location :
Galati
DOI :
10.1109/SIITME.2013.6743669
