DocumentCode
682876
Title
Nucleation, growth, and orientation analysis of quaternary-sputtered Cu(In, Ga)Se2
Author
Myers, J.D. ; Frantz, J.A. ; Bekele, R.Y. ; Qadri, Syed B. ; Sanghera, J.S.
Author_Institution
U.S. Naval Res. Lab., Washington, DC, USA
fYear
2013
fDate
16-21 June 2013
Abstract
Cu(In, Ga)Se2 films of various thicknesses were deposited from a single quaternary sputtering target and evaluated using x-ray diffraction and electron microscopy. Strong evidence of Volmer-Weber growth is observed, with the bare molybdenum bottom contact still observable after 600 seconds of growth and a nominal film thickness of ~100 nm. X-ray diffraction characterization reveals that the degree of preferred orientation increases with additional growth time, indicating film reorganization and preferential adherence of deposited species. Further, the degree of preferred orientation decreases with the age of the sputtering target, making this a possible technique to monitor the remaining target lifetime.
Keywords
X-ray diffraction; copper compounds; electron microscopy; gallium compounds; indium compounds; nucleation; selenium compounds; semiconductor growth; semiconductor thin films; sputtering; Cu(In-Ga)Se2; electron microscopy; nucleation; orientation analysis; quaternary-sputtering; semiconductor growth; sputtering target; x-ray diffraction; Films; Microscopy; Rough surfaces; Sputtering; Surface morphology; Surface roughness; X-ray diffraction; scanning electron microscopy; semiconductor growth; sputtering; thin films; x-ray diffraction;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference (PVSC), 2013 IEEE 39th
Conference_Location
Tampa, FL
Type
conf
DOI
10.1109/PVSC.2013.6744177
Filename
6744177
Link To Document