DocumentCode
682891
Title
Plasma treatment to improve amorphous silicon solar cell´s performance
Author
Changyong Chen ; Xunming Deng ; Zhaoning Song
Author_Institution
Dept. of Phys. & Astron., Univ. of Toledo, Toledo, OH, USA
fYear
2013
fDate
16-21 June 2013
Firstpage
1339
Lastpage
1342
Abstract
Amorphous silicon-based solar cell is usually composed of two or three multi-junctions, and each of them is formed by a p-layer, an intrinsic layer (i-layer), and an n-layer. The interfaces formed by these layers have been found to play a key role in determining cell performance. Among the interfaces, the p/i interface can be more obviously influential on cell performance, such as open circuit voltage (Voc), fill factor (FF), etc. This is because holes have much low mobility compared with electrons, thus they are more sensitive to the quality of the p/i interfaces. In this study, we reported results about making use of hydrogen plasma treatment to improve quality of the p/i interface, and finally increasing energy conversion efficiency. Our results show that FF can be obviously increased after the plasma treatment at proper powers. We have increased the energy conversion efficiency by 7% compared to that of the sample without plasma treatment. This study developed one way to optimize amorphous silicon-based solar cell.
Keywords
amorphous semiconductors; plasma materials processing; semiconductor junctions; solar cells; FF; amorphous silicon solar cell performance; efficiency 7 percent; energy conversion efficiency; fill factor; hydrogen plasma treatment; intrinsic layer; multijunctions; n-layer; open circuit voltage; p-i interface; p-layer; Amorphous silicon; Hydrogen; Photonic band gap; Photovoltaic cells; Plasmas; Surface treatment; PN junction; amorphous silicon; interfaces; photovoltaic cell; plasma;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference (PVSC), 2013 IEEE 39th
Conference_Location
Tampa, FL
Type
conf
DOI
10.1109/PVSC.2013.6744390
Filename
6744390
Link To Document