Effects of absorber doping and post-deposition treatments on the performance of n-type poly-Si thin film solar cells on glass

High temperature, 740 °C or 800 °C, hydrogenation treatment was applied to n-type polycrystalline silicon thin film solar cells on glass with absorber doping from 5×10¹⁶ cm^-3 to 5×10¹⁷ cm^-3, after rapid thermal annealing at 930 °C or 970 °C. Effects of hydrogenation and RTA temperature on the performance of n-type poly-Si thin film solar cells were studied. It is found that higher RTA temperature leads to higher open circuit voltage in all absorber doping range at low hydrogenation temperature. Higher hydrogenation temperature improves the open circuit voltage in the mediate absorber doping range significantly and this effect is independent of RTA temperature.