Study of semiconductor nitrides thin films for photovoltaic (PV) applications

Author

Santana-Rodriguez, G. ; de Melo, O. ; Lopez-Lopez, M. ; de Moure Flores, F. ; Hernandez-Hernandez, L.A. ; Aguilar-Hernandez, J. ; Mendoza-Perez, R. ; Rojas-Trigos, J.B. ; Contreras-Puente, G. ; Zamora, L.

Author_Institution

Inst. de Investig. en Mater., UNAM, Mexico City, Mexico

fYear

2013

fDate

16-21 June 2013

Firstpage

2127

Lastpage

2130

Abstract

We present in this work results on semiconductor nitride thin films as grown by Close Space Vapor Transport (CSVT) and Laser Ablation (LA). The films were processed in different substrates and were characterized by X-Ray Diffraction, Scanning Electron Microscopy, Energy Dispersive Spectroscopy, Transmission Electron Microscopy (TEM) and Photoluminescence (PL). The processed films are conformed by substrate/GaN or /n-GaN or /p-GaN. In general the results indicate that the films are suitable for photovoltaic applications. We discuss our results according to the present state of the art of the PV devices of these materials.

Keywords

X-ray chemical analysis; X-ray diffraction; gallium compounds; nitrogen compounds; photoluminescence; semiconductor thin films; solar absorber-convertors; solar cells; thin films; transmission electron microscopy; GaN; PV applications; PV devices; TEM; X-ray diffraction; close space vapor transport; energy dispersive spectroscopy; laser ablation; photoluminescence; photovoltaic applications; scanning electron microscopy; semiconductor nitrides thin films; transmission electron microscopy; Cities and towns; Films; Gallium nitride; Photonic band gap; Photovoltaic systems; Substrates; CSVT; PLD; Photoluminiscence; XRD; gallium nitrides; solar cells;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference (PVSC), 2013 IEEE 39th

Conference_Location

Tampa, FL

Type

conf

DOI

10.1109/PVSC.2013.6744894

Filename

6744894