p+ Emitters on n-type c-Si using rapid thermal annealing of PECVD a-Si films and aluminum metallization

Author

Reblitz, Tim ; Tracy, Clarence ; Dauksher, Bill ; Herasimenka, Stanislau ; Bowden, Stuart

Author_Institution

Arizona State Univ., Tempe, AZ, USA

fYear

2013

fDate

16-21 June 2013

Firstpage

2257

Lastpage

2262

Abstract

We present the development and characterization of n-type mono-Si photovoltaic cells with p+ emitters formed by the rapid thermal annealing of PECVD boron-doped amorphous silicon (a-Si) films. Aluminum metallization was deposited from evaporator and sputtering tool sources. The process yielded emitters of excellent uniformity (average non-uniformity of 4.4% over 40 samples) with sheet resistance ranging from 53 Ω/□ to 249 Ω/□ inversely dependent on the thickness of p+ film annealed. A reasonably-low post-anneal series resistance of 0.602 Ω*cm² suggests that all-aluminum metallization is sufficient for silicon photovoltaic cells of high efficiency.

Keywords

aluminium; amorphous semiconductors; boron; electric resistance; elemental semiconductors; plasma CVD; rapid thermal annealing; semiconductor device metallisation; semiconductor thin films; silicon; solar cells; thin film devices; PECVD; RTA; Si-Si:B-Al; all-aluminum metallization; boron doped amorphous silicon film; evaporator; n-type mono-Si photovoltaic cells; p+ emitters; p+ film annealing; rapid thermal annealing; sheet resistance; sputtering tool source; Aluminum; Films; Metallization; Photovoltaic cells; Rapid thermal annealing; Substrates; PECVD; RTA; amorphous semiconductors; boron; etching; photovoltaic cells;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference (PVSC), 2013 IEEE 39th

Conference_Location

Tampa, FL

Type

conf

DOI

10.1109/PVSC.2013.6744927

Filename

6744927