Title :
Ion-implanted high-efficiency solar cells on cast monocrystalline silicon
Author :
Sheoran, Manav ; Bateman, Nicholas ; Ji Li ; Jiali Li ; Jiaxing Bao ; Ruiping Wang ; Xusheng Wang
Author_Institution :
Appl. Mater., Varian Semicond. Equip., Gloucester, MA, USA
Abstract :
This paper demonstrates high-efficiency solar cells made on commercial grade cast monocrystalline (cast-mono) silicon using ion implantation. 18.9% efficient solar cells on 156 mm square cast-mono wafers from Canadian Solar are fabricated featuring an oxide passivated emitter, aluminum back-surface field and full industrial processing. Further investigation revealed that the cast-mono cells can benefit from the increased short-circuit current density due to random pyramid texture, compared to isotexture, even down to 60% area of <;100> grain on a wafer. This paper highlights the importance of improving the quality and yield of cast-mono wafers and the benefits of ion implant technology to produce high-efficiency cast-mono cells at lower cost. Also highlighted is the importance of increased light trapping from alkaline texture of cast-mono wafers.
Keywords :
elemental semiconductors; ion implantation; short-circuit currents; silicon; solar cells; Canadian solar; Si; aluminum back-surface field; cast monocrystalline silicon; cast-mono cells; cast-mono wafers; high-efficiency cast-mono cells; industrial processing; ion implant technology; ion implantation; ion-implanted high-efficiency solar cells; isotexture; oxide passivated emitter; random pyramid texture; short-circuit current density; Ion implantation; MONOS devices; Photovoltaic cells; Reflectivity; Resistance; Silicon; Ion Implantation; cast mono; high efficiency; quasi mono;
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2013 IEEE 39th
Conference_Location :
Tampa, FL
DOI :
10.1109/PVSC.2013.6744930