Characterization of nitrogen-doped TiO2 thin films for photovoltaic applications

Author

Tian, L. ; Giusti, G. ; Soum-Glaude, A. ; Dan, C.Y. ; Cagnon, L. ; Volpi, F. ; Mantoux, A. ; Daniele, S. ; Blanquet, E. ; Bellet, D.

Author_Institution

Sci. et Ing. des Mater. et Procedes, Grenoble, France

fYear

2013

fDate

16-21 June 2013

Firstpage

2479

Lastpage

2482

Abstract

Nitrogen-doped TiO₂ thin films were deposited by atomic layer deposition on glass substrates with various nitrogen concentrations for potential use in photovoltaic applications as a transparent p-type layer. Nitrogen doping was achieved by combining the use of titanium isopropoxide, N₂O and NH₃ as precursors. All the films were deposited at 265 °C. The maximum nitrogen doping level achieved in this study was 4.5 at. % resulting in films exhibiting a resistivity of 116 Ω cm associated with an average transmittance of 65% in the visible-infrared range.

Keywords

atomic layer deposition; metallic thin films; solar cells; titanium compounds; N₂O; NH₃; TiO₂:N; atomic layer deposition; nitrogen doping; photovoltaic applications; resistivity 116 ohmcm; temperature 265 degC; titanium isopropoxide thin films; transparent p-type layer; visible-infrared range; Atomic layer deposition; Conductivity; Doping; Films; Nitrogen; Photonic band gap; Titanium; TiO2; atomic layer deposition; nitrogen doping; solar cells;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference (PVSC), 2013 IEEE 39th

Conference_Location

Tampa, FL

Type

conf

DOI

10.1109/PVSC.2013.6744978

Filename

6744978