• DocumentCode
    683245
  • Title

    CdTe vs. GaAs solar cells — A modeling case study with preliminary experimental results

  • Author

    Kirk, Alexander P. ; DiNezza, Michael J. ; Shi Liu ; Xin-Hao Zhao ; Yong-Hang Zhang

  • Author_Institution
    Center for Photonics Innovation, Arizona State Univ., Tempe, AZ, USA
  • fYear
    2013
  • fDate
    16-21 June 2013
  • Firstpage
    2515
  • Lastpage
    2517
  • Abstract
    A modeling study has been undertaken to compare CdTe versus GaAs solar cells in order to explore and forecast the possible evolution of CdTe solar cell performance while using GaAs solar cells as a benchmark. A complementary experimental comparison study of two almost identical MgCdTe/CdTe/MgCdTe and AlGaAs/GaAs/AlGaAs double-heterostructure (DH) samples grown by MBE guided the solar cell modeling. Both DH samples give strong photoluminescence at room temperature (RT) while time-resolved photoluminescence measurements reveal a 50 ns carrier lifetime at RT for the MgCdTe/CdTe/MgCdTe DH sample. The modeling results based on these experimental data indicate that CdTe solar cells can achieve efficiency in the range of 24-27%, depending on the carrier lifetime, under the AM1.5G spectrum.
  • Keywords
    III-V semiconductors; aluminium compounds; cadmium compounds; gallium arsenide; magnesium compounds; solar cells; AlGaAs-GaAs-AlGaAs; MgCdTe-CdTe-MgCdTe; double heterostructure samples; solar cells; time resolved photoluminescence measurements; Absorption; Doping; Gallium arsenide; Photovoltaic cells; Radiative recombination; Semiconductor process modeling; Temperature measurement; CdTe; GaAs; modeling; solar cell;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference (PVSC), 2013 IEEE 39th
  • Conference_Location
    Tampa, FL
  • Type

    conf

  • DOI
    10.1109/PVSC.2013.6744987
  • Filename
    6744987