Preserving voltage and long wavelength photoresponse in GaSb/GaAs quantum dot solar cells

Author

Jinyoung Hwang ; Martin, Alain J. ; Kyusang Lee ; Forrest, Stephen ; Millunchick, Joanna ; Phillips, Jacob

Author_Institution

Dept. of Electr. Eng. & Comp. Sci., Univ. of Michigan, Ann Arbor, MI, USA

fYear

2013

fDate

16-21 June 2013

Firstpage

3191

Lastpage

3194

Abstract

Improvement in the open circuit voltage of the GaSb/GaAs quantum dot intermediate band solar cell is achieved by compensating thermionic hole emission of the quantum dots with n-type doping while the short circuit current decreases due to reduced absorption and/or carrier collection. A new QD-IBSC design with a graded doping profile is studied where the QD layers are located at the edge of the space charge region. The built-in electric field provides enhanced photoresponse while preserving solar cell voltage.

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; semiconductor doping; semiconductor quantum dots; short-circuit currents; solar cells; thermionic emission; GaSb-GaAs; QD-IBSC design; built-in electric field; carrier collection; graded doping profile; long wavelength photoresponse; n-type doping; open circuit voltage; quantum dot intermediate band solar cell; short circuit current; solar cell voltage preservation; space charge region; thermionic hole emission compensation; Doping; Gallium arsenide; Junctions; Photovoltaic cells; Quantum dots; Space charge; Thermionic emission; III-V semiconductor materials; Quantum dots; gallium arsenide; p-i-n diodes; photovoltaic cells;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference (PVSC), 2013 IEEE 39th

Conference_Location

Tampa, FL

Type

conf

DOI

10.1109/PVSC.2013.6745131

Filename

6745131