• DocumentCode
    683393
  • Title

    Lifetime improvement for high efficiency Cu2ZnSnS4 submodules

  • Author

    Sugimoto, Hiroshi ; Liao, Chenglin ; Hiroi, Homare ; Sakai, Noriyuki ; Kato, Toshihiko

  • Author_Institution
    Solar Bus. Center, Showa Shell Sekiyu K.K., Atsugi, Japan
  • fYear
    2013
  • fDate
    16-21 June 2013
  • Firstpage
    3208
  • Lastpage
    3211
  • Abstract
    Photoluminescence (PL) lifetime of 36 ns on Cu2ZnSnS4 absorber was achieved by optimizing absorber formation. The high quality absorber enabled us to achieve 9.2% efficiency Cu2ZnSnS4 submodule. Comparison between the PL lifetime and atomic composition showed lower Cu/Sn ratio resulted in longer lifetime. The lower Cu/Sn ratio made bandgap higher and voltage deficit lower. The PL intensity mapping accelerated the quality clarification of the various absorbers and contributed to the achievement of high efficiency Cu2ZnSnS4 submodules.
  • Keywords
    copper compounds; energy gap; photoluminescence; selenium compounds; solar cells; tin compounds; zinc compounds; Cu2ZnSnS4; PL intensity mapping; absorber formation; atomic composition; bandgap; photoluminescence; solar cells; submodules; Buffer layers; Measurement by laser beam; Photonic band gap; Photovoltaic cells; Sputtering; Tin; Uninterruptible power systems; CZTS; PL; lifetime; mapping; submodule;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference (PVSC), 2013 IEEE 39th
  • Conference_Location
    Tampa, FL
  • Type

    conf

  • DOI
    10.1109/PVSC.2013.6745135
  • Filename
    6745135
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=683393