Substrate-type Cu(In, Ga)Se2 solar cells with all layers deposited by non-vacuum solution-based methods

Author

Nagino, Shinsuke ; Suzuki, Hajime ; Ueno, Satoshi

Author_Institution

R&D Center, Dai Nippon Printing Co., Ltd. (DNP), Kashiwa, Japan

fYear

2013

fDate

16-21 June 2013

Firstpage

3475

Lastpage

3479

Abstract

Cu(In, Ga)Se2 (CIGS) solar cells with all layers deposited using solution-based methods were demonstrated in order to investigate the utilization of wet process in CIGS photovoltaic cell fabrication. An active area efficiency of 7.7% was obtained. On the other hand, the highest efficiency of the cells with solution-processed CIGS and CdS layers was 15.3 %, which was about twice higher than that of all wet-coated cells. It was revealed that the quality of the ZnO nanoparticle layer, a lack of Na in the CIGS layer and the sheet resistance of SnO₂:F back electrode limited the cell performance.

Keywords

II-VI semiconductors; cadmium compounds; electrodes; fluorine; solar cells; tin compounds; zinc compounds; CdS; SnO₂:F; ZnO; back electrode; nanoparticle layer; nonvacuum solution-based methods; photovoltaic cell fabrication; substrate-type solar cells; wet-coated cells; Electrodes; Films; Photovoltaic cells; Photovoltaic systems; Resistance; Substrates; Zinc oxide; Ag nanowire; Cu(In, Ga)Se2; ZnO nanoparticle; non-vacuum wet process;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference (PVSC), 2013 IEEE 39th

Conference_Location

Tampa, FL

Type

conf

DOI

10.1109/PVSC.2013.6745194

Filename

6745194