Title :
Effect of doped Co2O3 on Dielectric Properties of ZnO Varistor
Author :
Chuntian Chen ; Yulong Qiao ; Dongsheng Wang ; Qichao Shi ; Haifeng Yang ; Ximing Wang
Author_Institution :
Harbin Univ. of Sci. & Technol., Harbin, China
Abstract :
This paper researches the effect of doped Co2O3 on the dielectric properties of ZnO varistor. With the increasing mol percentage of Co2O3, the conductivity of ZnO grain reducing, the turning point of the voltage drops to a lower position of the current density. According to the analysis of capacitance and voltage, the decrease of grain conductivity can attribute to the carrier concentration decrease which is caused by the reduction of interstitial Zni or concentration of oxygen vacancy V0. The doped Co2O3 will also reduce the dielectric loss of nonlinear resistance. The varistor may apply to metal oxide arrester.
Keywords :
II-VI semiconductors; arresters; capacitance; carrier density; cobalt compounds; current density; dielectric losses; electrical conductivity; interstitials; vacancies (crystal); varistors; wide band gap semiconductors; zinc compounds; ZnO:Co2O3; capacitance; carrier concentration; current density; dielectric loss; dielectric properties; electric conductivity; grain conductivity; interstitial; metal oxide arrester; nonlinear resistance; oxygen vacancy; varistor; Arresters; Conductivity; Dielectric losses; Resistance; Varistors; Zinc oxide; Doped; dielectric loss; electric conductivity; metal oxide arrester;
Conference_Titel :
Electrical Insulation and Dielectric Phenomena (CEIDP), 2013 IEEE Conference on
Conference_Location :
Shenzhen
DOI :
10.1109/CEIDP.2013.6747440
