• DocumentCode
    684177
  • Title

    The study of the effect in variation of A.C. applied voltage to the partial discharge localization inside transformer windings

  • Author

    Rahman, M. S. Abd ; Rapisarda, P. ; Lewin, P.L.

  • Author_Institution
    Tony Davies High Voltage Lab., Univ. of Southampton, Southampton, UK
  • fYear
    2013
  • fDate
    20-23 Oct. 2013
  • Firstpage
    1290
  • Lastpage
    1293
  • Abstract
    Ageing processes typically associated with the dielectric and insulation system occur inside high voltage plant. These unwanted processes may lead to generation of partial discharge (PD) activity and ultimately limit the operational life of the plant. The operational over stressing and defects introduced during manufacture also lead to the existence of PD activity and the source of this activity needs to be identified and remedied before further degradation processes cause catastrophic failure. Therefore, research into localization techniques of PD sources inside high voltage plant generally and particularly within transformer windings has become important in order to provide the asset health information that allows maintenance and replacement processes to be carried out effectively. Locating a PD source inside a transformer winding using on-line measurement data is vital in order to achieve these objectives. Methods have been proposed to achieve this and in this paper the distribution of PD signal energy in the time and frequency domains is used as a location tool. Analysis of experimental data reveals that this approach is independent of the applied voltage.
  • Keywords
    partial discharges; transformer windings; AC applied voltage; ageing process; high voltage plant; on line measurement data; partial discharge localization; transformer windings; Current measurement; Discharges (electric); Earth; Insulators; Partial discharges; Wavelet transforms; Windings;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electrical Insulation and Dielectric Phenomena (CEIDP), 2013 IEEE Conference on
  • Conference_Location
    Shenzhen
  • Type

    conf

  • DOI
    10.1109/CEIDP.2013.6748266
  • Filename
    6748266