• DocumentCode
    684179
  • Title

    Dielectric properties of epoxy/POSS composites

  • Author

    Heid, T. ; Frechette, Michel ; David, E.

  • Author_Institution
    Inst. de Rech. d´Hydro-Quebec (IREQ), Varennes, QC, Canada
  • fYear
    2013
  • fDate
    20-23 Oct. 2013
  • Firstpage
    751
  • Lastpage
    755
  • Abstract
    In this work, the dielectric responses of epoxy/POSS composites with different contents of liquid Triglycidylisobutyl-POSS (TGIB-POSS) varying from 1wt% to 10wt% were investigated using Broadband Dielectric Spectroscopy (BDS) at 20°C, before and after exposure to a post heat-treatment of the samples. Besides the known β-peak in the vicinity of 105 Hz, an additional interfacial loss peak for the epoxy/POSS composites with more than 1wt% TGIB-POSS has been observed for low frequencies. Furthermore, loss tangent values of the composites were found to be reduced after incorporation of POSS, along with an increased volume resistivity, especially after thermal ageing. Differential Scanning Calorimetry (DSC) has shown a decrease in glass transition temperatures with increasing TGIB-POSS content.
  • Keywords
    ageing; composite materials; dielectric properties; differential scanning calorimetry; epoxy insulation; heat treatment; ß-peak; BDS; DSC; TGIB-POSS; broadband dielectric spectroscopy; dielectric properties; dielectric response; differential scanning calorimetry; epoxy-POSS composites; glass transition temperatures; heat treatment; interfacial loss; liquid triglycidylisobutyl-POSS; temperature 20 degC; thermal ageing; volume resistivity; Conductivity; Dielectric losses; Heating; Permittivity; Polymers; Voltage measurement; POSS; dielectric response; epoxy; glass transition temperature; interfacial polarization; loss tangent; nanodielectrics; polymer nanocomposites; silica; thermal ageing; volume resistivity;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electrical Insulation and Dielectric Phenomena (CEIDP), 2013 IEEE Conference on
  • Conference_Location
    Shenzhen
  • Type

    conf

  • DOI
    10.1109/CEIDP.2013.6748268
  • Filename
    6748268