Preparation of CuInSe2 thin films by post-deposition selenization of sputter deposited Cu-In-O multiple phase thin films

Selenization of sputter deposited Cu-In-O films is investigated using two different sputtering targets. Sputter deposition parameters are varied to study the phase formation from Cu₂In₂O₅ and Cu+In₂O₃ sputtering targets. XRD patterns of sputter deposited thin films from these targets showed different crystal orientation of the In₂O₃ phases deposited at 300°C and 500°C substrate temperatures. Films prepared by sputtering from Cu₂In₂O₅ target are annealed under H₂Se-Ar gas and the films prepared from Cu+In₂O₃ sputtering are annealed with Se under Ar-H₂ gas. XRD results showed that the CuInSe₂ phase is formed in all samples and a residual impurity phase In₂O₃ is identified for some of the films. Additionally, the results suggested that the selenization of Cu-In-O thin film revealed different effects when In₂O₃ phase is oriented. Additional layers are deposited for solar cell device and the device performances are investigated.