High-performance surface acoustic wave resonators in the 1 to 3 GHz range using a ScAlN/6H-SiC structure

Author

Hashimoto, Koji ; Sato, Seiki ; Teshigahara, Akihiko ; Nakamura, T. ; Kano, Kazuhiko

Author_Institution

Grad. Sch. of Eng., Chiba Univ., Chiba, Japan

Volume

60

Issue

3

fYear

2013

fDate

Mar-13

Firstpage

637

Lastpage

642

Abstract

This paper describes application of Sc-doped AlN (ScAlN) to wideband SAW devices in the 1 to 3 GHz range. First, it is shown theoretically that large SAW velocity and electromechanical coupling factor are simultaneously achievable when the ScAlN film is combined with a base substrate with extremely high acoustic wave velocities, such as diamond and SiC. Next, SAW delay lines are fabricated on the ScAlN/6H-SiC structure, and reasonable agreement between the theory and experiment is obtained. Finally, one-port SAW resonators are fabricated on the structure, and it is shown that high-performance is achievable in the 1 to 3 GHz range by use of the structure.

Keywords

acoustic wave velocity; diamond; electromechanical effects; scandium compounds; silicon compounds; surface acoustic wave delay lines; surface acoustic wave resonators; SAW delay lines; SAW velocity; acoustic wave velocity; base substrate; diamond; electromechanical coupling factor; frequency 1 GHz to 3 GHz; hgh-performance surface acoustic wave resonators; one-port SAW resonators; wideband SAW devices; Diamonds; Electrodes; Films; Substrates; Surface acoustic wave devices; Wideband;

fLanguage

English

Journal_Title

Ultrasonics, Ferroelectrics, and Frequency Control, IEEE Transactions on

Publisher

ieee

ISSN

0885-3010

Type

jour

DOI

10.1109/TUFFC.2013.2606

Filename

6470425