DocumentCode :
684781
Title :
Self-heating characterization of multi-finger n-MOSFETs used for RF-CMOS applications
Author :
Aoki, Hidetaka ; Shimasue, Masanori
Author_Institution :
MODECH Inc., Hachioji, Japan
fYear :
2012
fDate :
7-9 Dec. 2012
Firstpage :
1
Lastpage :
5
Abstract :
The purpose of this research is to characterize and model the self-heating effect of multi-finger n-channel MOSFETs. Selfheating effect does not need to be analyzed for single-finger bulk CMOS devices. However, it should be considered for multi-finger n-channel MOSFETs that are mainly used for RFCMOS applications. We have measured and characterized multi-finger (16, 64, and 128 fins) n-channel MOSFETs, extensively, with instruments, and process and device simulators. A DC drain current measurement method without self-heating is developed and performed by using a vector network analyzer. Lastly, a compact model, which is a BSIM4 model with customized equations and additional sub-circuit, was developed and implemented in our SPICE simulator. As the results, using the proposed model and extracted parameters excellent agreements have been obtained between measurements and simulations in DC and S-parameter domain whereas the original BSIM4 shows inconsistency between static DC and small signal ac simulations because of the rack of self-heating effect. The proposed model and measurement method can be applied for any RF-CMOS circuit design applications.
Keywords :
CMOS integrated circuits; MOSFET; electric current measurement; semiconductor device models; BSIM4 model; CMOS device; DC drain current measurement method; RF CMOS circuit design; S parameter domain; SPICE simulator; multifinger n-channel MOSFET; self heating characterization; small signal AC simulation; static DC simulation; vector network analyzer; Modeling; Multi-Finger; RF-CMOS; Self-Heating; Simulation;
fLanguage :
English
Publisher :
iet
Conference_Titel :
Information Science and Control Engineering 2012 (ICISCE 2012), IET International Conference on
Conference_Location :
Shenzhen
Electronic_ISBN :
978-1-84919-641-3
Type :
conf
DOI :
10.1049/cp.2012.2367
Filename :
6755746
Link To Document :
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