Highly Scalable Horizontal Channel 3-D NAND Memory Excellent in Compatibility With Conventional Fabrication Technology

Author

Sakuma, Keita ; Kusai, Haruka ; Fujii, Shohei ; Koyama, Masanori

Author_Institution

Corp. R&D Center, Toshiba Corp., Kawasaki, Japan

Volume

34

Issue

9

fYear

2013

fDate

Sept. 2013

Firstpage

1142

Lastpage

1144

Abstract

We developed a stacked horizontal channel type floating gate (HC-FG) NAND memory; a 3-D stacked NAND array composed of conventional FG cells. With this cell structure, a wide program/erase (P/E) window is obtained, accompanied by superior read disturb immunity, P/E endurance, and data retention. In addition, we propose a low-cost layer select transistor (LST) that is easily integrated with the HC-FG cell. Because the 3-D memory composed of the HC-FG cell and the LST has good compatibility with conventional fabrication technology, further bit cost scaling is expected.

Keywords

integrated memory circuits; logic arrays; three-dimensional integrated circuits; 3D NAND memory; 3D stacked NAND array; conventional fabrication technology; conventional floating gate cell; floating gate NAND memory; highly scalable horizontal channel; low cost layer select transistor; stacked horizontal channel type; Arrays; Ash; Fabrication; Logic gates; Scanning electron microscopy; Silicon; Transistors; 3-D NAND Flash memory; floating gate (FG) cell; stacked horizontal channel;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2013.2274472

Filename

6574221