• DocumentCode
    685401
  • Title

    A novel 4H-SiC VDMOS utilizing fully depleted p-body structure

  • Author

    Yunbin Gao ; YouRun Zhang ; Haoran Wu ; Bo Zhang Ying Liu

  • Author_Institution
    State key Lab. of Electron. Thin Films & Integrated Devices, Univ. of Electron. Sci. & Technol. of China, Dongguan, China
  • Volume
    1
  • fYear
    2013
  • fDate
    15-17 Nov. 2013
  • Firstpage
    331
  • Lastpage
    334
  • Abstract
    A novel n-channel VDMOS fabricated on 4H-SiC is reported. This device is a distinct double-layer structure with an ultra-thin n-doped region under a fully depleted p-body region in the channel region which induces a larger amount of carriers when the gate bias exceeds the threshold voltage, with little leakage current in off-state. As a result, the specific on-resistance of the VDMOS is 6.21 mΩ·cm2, which is obviously reduced comparing with a conventional structure as good as the blocking voltage of nearly 1000V.
  • Keywords
    MOSFET; leakage currents; silicon compounds; wide band gap semiconductors; 4H-SiC VDMOS; SiC; double-layer structure; fully depleted p-body structure; n-channel VDMOS; threshold voltage; ultra-thin n-doped region; Doping; Electric breakdown; Leakage currents; Logic gates; Scattering; Silicon carbide;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Communications, Circuits and Systems (ICCCAS), 2013 International Conference on
  • Conference_Location
    Chengdu
  • Print_ISBN
    978-1-4799-3050-0
  • Type

    conf

  • DOI
    10.1109/ICCCAS.2013.6765245
  • Filename
    6765245
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=685401