• DocumentCode
    68542
  • Title

    Extraction of a Model for a Microwave Power pHEMT

  • Author

    Ross, Tyler N. ; Cormier, Gabriel ; Wight, Jim S.

  • Author_Institution
    Dept. of Electron., Carleton Univ., Ottawa, ON, Canada
  • Volume
    15
  • Issue
    1
  • fYear
    2014
  • fDate
    Jan.-Feb. 2014
  • Firstpage
    102
  • Lastpage
    108
  • Abstract
    This article presents the development of a large-signal transistor model for a power microwave pseudomorphic high-electron mobility transistor (pHEMT). This model won the first prize in the Microwave Transistor Modeling student competition held during the 2013 IEEE Microwave Theory and Techniques Society (MTT-S) International Microwave Symposium (IMS2013) in Seattle, Washington.
  • Keywords
    microwave field effect transistors; power HEMT; semiconductor device models; 2013 IEEE Microwave Theory and Techniques Society; IMS2013; International Microwave Symposium; MTT-S; Microwave Transistor Modeling; Seattle Washington; large-signal transistor model; microwave power pHEMT; power microwave pseudomorphic high-electron mobility transistor; Capacitance; Integrated circuit modeling; Logic gates; Mathematical model; Microwave circuits; PHEMTs; Temperature measurement; Transistors;
  • fLanguage
    English
  • Journal_Title
    Microwave Magazine, IEEE
  • Publisher
    ieee
  • ISSN
    1527-3342
  • Type

    jour

  • DOI
    10.1109/MMM.2013.2288833
  • Filename
    6717066
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=68542