A new transition density calculation method for XOR gate

With remarkable growth of the integration density in IC design, power is being given comparable weight to speed and area. The transition density is a very important parameter for power estimation in power optimization. Previous researches on the transition density for random signals are based on the probability or another parameter named non-transition density, which usually lead to the larger experimental errors. In this paper, a novel method for the signal transition density calculation is presented for 2-XOR gate. Experimental results show that the proposed method is more accurate than the published methods. Comparing to the EDA tools, the average experimental error of our method is less than 1.356%.