Ku-band GaN HPA MMIC with high-power and high-PAE performances

Author

Youn Sub Noh ; Yun Ho Choi ; In-Bok Yom

Author_Institution

Electron. & Telecommun. Res. Inst., Daejeon, South Korea

Volume

50

Issue

19

fYear

2014

fDate

September 11 2014

Firstpage

1361

Lastpage

1363

Abstract

A Ku-band high-power and high-power-added efficiency (PAE) high-power amplifier (HPA) monolithic microwave-integrated circuit (MMIC) is demonstrated with a 0.25 μm gallium nitride (GaN) high electron mobility transistor technology on a silicon carbide substrate. Measured continuous-wave performances for the two-stage HPA in-fixture exhibit 17.5-18.3 W of output power (P_OUT) and 36.4-39.5% of PAE over the frequency range of 13.5-14.5 GHz. The fabricated two-stage HPA MMIC with all matching networks is as small as 3.3 × 3.5 mm, generating an output power density of 1522 mW/mm².

Keywords

HEMT integrated circuits; III-V semiconductors; MMIC power amplifiers; gallium compounds; silicon compounds; wide band gap semiconductors; 2-stage HPA in-fixture; GaN; Ku-band gallium nitride HPA MMIC; efficiency 36.4 percent to 39.5 percent; fabricated 2-stage HPA MMIC; frequency 13.5 GHz to 14.5 GHz; gallium nitride HEMT technology; gallium nitride high electron mobility transistor technology; high-power amplifier monolithic microwave-integrated circuit; high-power high-PAE performances; matching network; measured CW performance; measured continuous wave performance; power 17.5 W to 18.3 W; power-added efficiency; silicon carbide substrate; size 0.25 micron;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el.2014.1211

Filename

6898648