DocumentCode
68704
Title
Thermal Rectifier Based on p-n Junction
Author
Kislitsyn, Viktor ; Pavliuk, Sergiy ; Soltys, Roman ; Lozovski, Valeri ; Strilchuk, Galyna
Author_Institution
Paton Electr. Welding Inst., Kiev, Ukraine
Volume
61
Issue
2
fYear
2014
fDate
Feb. 2014
Firstpage
548
Lastpage
551
Abstract
We propose a novel thermal rectifier based on p-n junction. The thermal rectification effect in the Si p-n junction system was demonstrated experimentally and explained theoretically. It was shown that heat flow from n- to p-type domain is greater than that from p-type to n-type domain. The thermal rectification factor obtained experimentally (evaluated theoretically) was 1.3 (~ 1.43).
Keywords
elemental semiconductors; p-n junctions; rectification; silicon; Si; p-n junction system; semiconductor junctions; thermal rectification effect; thermal rectifier; Conductivity; Heating; Lattices; P-n junctions; Semiconductor diodes; Silicon; Thermal conductivity; Semiconductor devices; semiconductor junctions; silicon; thermal rectifier;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/TED.2013.2296041
Filename
6717091
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