Study on the fast signal transfer for large-area X-ray image sensors

Author

MyungSoo Kim ; Dong-uk Kang ; Dae Hee Lee ; Chankyu Kim ; Hyunjun Yoo ; Yewon Kim ; Jongyul Kim ; Minsik Cho ; Hyoungtaek Kim ; Kyeongjin Park ; Jaewon Heo ; Hyunduk Kim ; Byoung-wook Kim ; Gyuseong Cho

Author_Institution

Korea Adv. Inst. of Sci. & Technol., Daejeon, South Korea

fYear

2013

fDate

Oct. 27 2013-Nov. 2 2013

Firstpage

1

Lastpage

5

Abstract

A large area X-ray CMOS image sensor (LXCIS) is a well-known imaging device for high speed and resolution. In design and fabrication process, we found several problems in making LXCIS, especially in signal transferring. A 3-transistor active pixel sensor (3T APS) in LXCIS has a long signal line about 16.896 cm as a worst case. This long signal line consists of metal and it has resistance and capacitance about 21.12 kΩ and 71.87 pF each. We have optimized 3T APSs transistors, applied boosting circuit, and designed a low parasitic resistance and capacitance. From our simulation result, we obtained a high speed operation, which ranges from 13.5 frame per second (FPS) to 18.6 FPS in 1536 × 3072 pixel arrays, and a high dynamic range by increasing maximum voltage of pixel output signal.

Keywords

CMOS image sensors; computerised tomography; diagnostic radiography; mammography; transistors; 3-transistor active pixel sensor; 3T APS; LXCIS; boosting circuit; capacithigh speed operationance; fast signal transfer; large-area X-ray CMOS image sensors; low parasitic resistance; Boosting; Integrated circuit modeling; Metals; Parasitic capacitance; Resistance; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC), 2013 IEEE

Conference_Location

Seoul

Print_ISBN

978-1-4799-0533-1

Type

conf

DOI

10.1109/NSSMIC.2013.6829607

Filename

6829607