DocumentCode :
687373
Title :
Measurement of polarization phenomena in CdTe radiation detector by optical laser pulses
Author :
Ito, Takao ; Suzuki, Yuya ; Koike, Atsushi ; Neo, Yoichiro ; Mimura, Hidenori ; Aoki, Toyohiro
Author_Institution :
Res. Inst. of Electron., Shizuoka Univ., Hamamatsu, Japan
fYear :
2013
fDate :
Oct. 27 2013-Nov. 2 2013
Firstpage :
1
Lastpage :
5
Abstract :
To investigate mechanisms of the polarization phenomena in the CdTe radiation detectors, we used optical laser pulses for carrier generation and detected the electrical response from the CdTe detectors as a function of carrier-generation position in the detector. Temporal change of the internal electric field at defined position in the CdTe detector can be directly observed by the laser pulse measurements. Detectors measured in this study were Schottky-type CdTe detectors with a thickness of 0.5 mm and a size of 2 × 1 mm2. Laser light from laser diode with a wavelength of 850 nm were modulated to pulses by using pulse generator and were irradiated to the cleaved side surface of the CdTe detectors. The incident pulse power was 10 nW, which correspond to one photon energy of γ-lay with a energy of several tens of keV. Time traces of output voltage amplified by preamplifier were measured by oscilloscope as a function of time after applying bias voltage. Pulse height and rise-up time was obtained from the time trace of the output voltage. The pulse height was decreased and the rise-up time was increased as a function of the time. Rate of these changes are larger at cathode side than anode side. Depletion layer in the detector is assumed to be shrunk and internal electric field in cathode side is decreased with time. The change of internal electric field is considered to be caused by carrier accumulation to deep acceptor level.
Keywords :
II-VI semiconductors; cadmium compounds; deep levels; impurity states; laser variables measurement; optical modulation; optical pulse generation; oscilloscopes; semiconductor counters; semiconductor lasers; CdTe radiation detector; Schottky-type CdTe detectors; anode side; bias voltage; carrier accumulation; carrier generation; cathode side; deep acceptor level; depletion layer; electrical response; incident pulse power; internal electric field; laser diode; laser light; laser pulse measurements; optical laser pulses; oscilloscope; output voltage time trace; photon energy; polarization phenomena; pulse generator; pulse height; rise-up time; temporal change; time function; Anodes; Cathodes; Detectors; Electric fields; Measurement by laser beam; Photonics; Radiation effects;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC), 2013 IEEE
Conference_Location :
Seoul
Print_ISBN :
978-1-4799-0533-1
Type :
conf
DOI :
10.1109/NSSMIC.2013.6829828
Filename :
6829828
Link To Document :
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