Title :
The impact of active area geometry and electrophysical characteristics on X-ray sensitivity and spatial resolution of GaAs:Cr radiation sensors
Author :
Lozinskaya, A. ; Tyazhev, Aleksey ; Tolbanov, O. ; Zarubin, A. ; Mokeev, D. ; Vorobiev, Alexey
Author_Institution :
Tomsk State Univ., Tomsk, Russia
fDate :
Oct. 27 2013-Nov. 2 2013
Abstract :
The results of calculations and experimental studies of pulse height distribution, sensitivity and spatial resolution dependences on detector´s contact area and electric field profiles in chromium compensated gallium arsenide (GaAs:Cr) radiation sensors are presented. Mathematical modeling of electric field distribution for various contact and active area sizes were made. It is shown that spatial resolution is determined not only by the mobility-lifetime product, but also by polarity of applied bias. Several methods were suggested to improve energy resolution of GaAs:Cr sensors.
Keywords :
X-ray detection; carrier mobility; electric fields; gallium arsenide; GaAs-Cr; X-ray sensitivity; active area geometry impact; detector contact area; electric field distribution; electrophysical characteristics; mathematical modeling; mobility lifetime product; polarity; pulse height distribution; radiation sensor; spatial resolution; Arrays; Cathodes; Detectors; Sensitivity; Sensor phenomena and characterization; Spatial resolution;
Conference_Titel :
Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC), 2013 IEEE
Conference_Location :
Seoul
Print_ISBN :
978-1-4799-0533-1
DOI :
10.1109/NSSMIC.2013.6829835
