Recent advances in photodetectors: Ultraviolet to mid-wave infrared

Author

Campbell, Joe C.

Author_Institution

Univ. of Virginia, Charlottesville, VA, USA

fYear

2013

fDate

9-14 June 2013

Firstpage

1

Lastpage

2

Abstract

This talk will describe recent work on photodetectors. The discussion on avalanche photodiodes (APDs) will include novel low-noise structures for telecommunications wavelengths, SiC APDs in the ultraviolet, InAs APDs for mid-wave infrared, and recent advances in single photon detection. The presentation on p-i-n photodiodes will concentrate on high-speed, high-power, high-linearity photodiodes for analog optical links and Si photonics using heterogeneous integration.

Keywords

III-V semiconductors; avalanche photodiodes; high-speed optical techniques; indium compounds; infrared detectors; integrated optics; optical links; optical noise; p-i-n diodes; photodetectors; silicon compounds; ultraviolet detectors; InAs; SiC; analog optical links; heterogeneous integration; high-linearity photodiodes; high-power photodiodes; high-speed photodiodes; indium arsenide avalanche photodiodes; low-noise structures; p-i-n photodiodes; photodetectors; silicon carbide avalanche photodiodes; silicon photonics; single-photon detection; telecommunications wavelengths; ultraviolet-to midwave infrared spectra; Avalanche photodiodes; Indium gallium arsenide; Indium phosphide; Noise; Photonics; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics (CLEO), 2013 Conference on

Conference_Location

San Jose, CA

Type

conf

Filename

6833394